ES6U41T2R

Description：MOSFET N-CH 30V 1.5A 6WEMT
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)

SKU:6c38671c6e61 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 1.5A 6WEMT
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：240mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：80 pF @ 10 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-WEMT
Package / Case：6-SMD, Flat Leads

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ES6U41T2R

Overview

The ES6U41T2R is a dual-component semiconductor device integrating an N-channel MOSFET with a Schottky barrier diode, manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in a surface-mount WEMT6 package, equivalent to SOT-563T. The MOSFET section features a drain-source voltage rating of 30V and a continuous drain current of 1.5A. Key electrical characteristics include a typical on-resistance of 0.24Ω at a gate drive of 2.5V, with a total gate charge of 1.6nC. The integrated Schottky diode supports a reverse voltage of 20V and a forward current of 0.5A. The device operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 0.7W.

Feature Summary

Integrates an N-channel MOSFET and a Schottky barrier diode into a single compact surface-mount package for space-constrained designs.
Optimized for low-voltage applications with a 2.5V gate drive capability, enabling efficient switching performance.
Features a small footprint physical profile suitable for high-density PCB layouts.

Applications

Low-side switching circuits requiring integrated freewheeling protection.
Power management modules in portable electronic devices.
DC-DC converter output stages utilizing synchronous rectification or standard diode configurations.

Procurement Notes

This component is officially designated as manufacturing discontinued and is not available for new production orders. Procurement is restricted to existing stock or last-time buy scenarios through authorized distribution channels. Verify the specific supply status and authenticity with the manufacturer or certified distributors before finalizing any acquisition plans.

Selection Notes

Engineers should evaluate alternative components due to the discontinued status of this part. When selecting a replacement, prioritize devices that match the original pinout, package dimensions, and electrical ratings, specifically the 30V drain-source voltage and 1.5A current capacity. Ensure the substitute offers comparable on-resistance at the target gate drive voltage to maintain circuit efficiency.

Part Context

The ES6U41T2R belongs to ROHM's lineup of combined MOSFET and diode packages designed to simplify circuit design and reduce board space. This specific model targets applications needing reliable switching with built-in flyback protection. Its integration reduces component count compared to discrete solutions, streamlining assembly processes for consumer electronics and industrial control systems.