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Product Detailed Parameters
- Description：IGBT MOD 1200V 35A 210W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 35A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Power - Max：210 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：2 nF @ 25 V
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Overview
The F1235R12KT4GBOSA1 is a 1200 V, 35 A IGBT module in the EconoPACK™3 package. It integrates Trench/Fieldstop IGBT4 and Emitter Controlled4 diode technologies. Maximum rated values include a collector-emitter voltage of 1200 V, continuous DC collector current of 35 A at TC=100°C, and repetitive peak collector current of 70 A. Total power dissipation is 210 W at TC=25°C. Typical saturation voltages are 1.85 V (VCEsat) and 1.70 V (VF). Thermal resistance from junction to case is 0.72 K/W for the IGBT and 1.00 K/W for the diode. The module features an isolation test voltage of 2.5 kV RMS.
Feature Summary
- Integrates Trench/Fieldstop IGBT4 technology with Emitter Controlled4 diodes for optimized switching performance.
- Utilizes the EconoPACK™3 housing design for efficient thermal management and compact installation.
- Features a copper baseplate and internal Al2O3 basic insulation for robust electrical isolation.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact manufacturing lot details or regional compliance variations. Ensure that the procurement channel provides valid traceability certificates matching the component revision level specified in the datasheet.
Selection Notes
Select this module for applications requiring high switching frequency and low conduction losses within the 1200 V class. Evaluate the thermal resistance parameters against the system's heatsink capabilities to ensure the junction temperature remains within the -40°C to +150°C operating range under expected load conditions.
Part Context
This component belongs to the Infineon EconoPACK™3 series utilizing IGBT4 technology. It is designed as a half-bridge configuration suitable for medium-power inverter applications. The module represents a balance between high current density and reliable operation in industrial environments.
Replacement Considerations
Direct replacements must match the 1200 V rating, 35 A current capacity, and EconoPACK™3 footprint. Verify pinout compatibility and thermal characteristics when substituting with other manufacturers' IGBT modules offering similar trench fieldstop technology.
