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The F3L11MR12W2M1B74BOMA1 is a three-phase CoolSiC MOSFET module from Infineon Technologies, designed for high-efficiency power conversion. It features a 1200 V drain-source breakdown voltage and a continuous drain current of 100 A. The device utilizes silicon carbide technology with a dual configuration per phase leg, supporting chassis mounting via press-fit contacts. Integrated negative temperature coefficient (NTC) sensors provide thermal monitoring. Operating temperatures range from -40°C to +150°C, with a fall time of 18.5 ns.
Verify the specific datasheet revision and ordering suffix against official Infineon documentation before procurement. Confirm that the component matches the required thermal and electrical specifications for the target application. Check for end-of-life notifications or discontinuance alerts, as availability may be restricted. Ensure compatibility with existing assembly processes regarding press-fit installation requirements.
Select this module for applications requiring high power density and efficiency in three-phase configurations. Consider the 1200 V rating and 100 A current capacity when designing thermal management systems. Evaluate the switching speed characteristics against electromagnetic interference (EMI) constraints. Verify that the package dimensions and pinout align with the intended PCB or chassis layout.
This component belongs to Infineon's CoolSiC portfolio, leveraging silicon carbide semiconductor material for superior performance compared to traditional silicon devices. The EasyPACK 2B form factor facilitates compact system design. It is engineered for automotive and industrial environments demanding high reliability and robust thermal performance under varying load conditions.
Consult official Infineon substitution guides for direct replacements. Cross-reference parameters such as voltage, current, and package type when evaluating alternative part numbers. Ensure any substitute maintains compatible thermal resistance and switching characteristics.