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The F3L11MR12W2M1C01BOMA1 is a CoolSiC™ MOSFET G2 three-phase module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features an EasyPACK C series package with screw mount installation. The module contains three N-Channel transistors with a drain-source breakdown voltage of 1200 V. Key electrical parameters include a continuous drain current of 11 A, a maximum on-resistance of 45 mΩ at 25°C, and a gate-source threshold voltage of 3.98 V. The device operates within a temperature range of -40°C to +175°C.
Verify the specific ordering suffix BOMA1 against official Infineon documentation to confirm exact packaging and reel specifications. Confirm component availability status as manufacturing schedules may vary. Ensure compatibility with existing thermal management solutions before procurement.
Select this component for applications requiring integrated three-phase SiC switching with low conduction losses. Verify that the 1200 V rating aligns with system bus voltages. Check that the 11 A continuous current capability meets load requirements. Ensure gate drive circuits support the specified threshold voltage and switching characteristics.
This part belongs to the CoolSiC™ MOSFET Generation 2 family, which offers improved performance over previous silicon carbide generations. It is designed for industrial applications such as PV inverters and motor drives. The EasyPACK C series provides a standardized form factor for efficient integration into power modules.
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and thermal resistance values when considering equivalent modules from other manufacturers.