F3L11MR12W2M1C01BOMA1

F3L11MR12W2M1C01BOMA1

  • Description:LOW POWER EASY
  • Series:*

SKU:3799178b5b9c Category: Brand:

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Product Detailed Parameters

  • Description:LOW POWER EASY
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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F3L11MR12W2M1C01BOMA1

Overview

The F3L11MR12W2M1C01BOMA1 is a CoolSiC™ MOSFET G2 three-phase module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features an EasyPACK C series package with screw mount installation. The module contains three N-Channel transistors with a drain-source breakdown voltage of 1200 V. Key electrical parameters include a continuous drain current of 11 A, a maximum on-resistance of 45 mΩ at 25°C, and a gate-source threshold voltage of 3.98 V. The device operates within a temperature range of -40°C to +175°C.

Feature Summary

  • Utilizes second-generation CoolSiC™ technology for enhanced switching performance
  • Integrated three-phase configuration in a compact EasyPACK C series housing
  • Designed for high thermal efficiency and robust operation in demanding environments

Applications

  • Photovoltaic inverters
  • Energy storage systems
  • Motor control drives

Procurement Notes

Verify the specific ordering suffix BOMA1 against official Infineon documentation to confirm exact packaging and reel specifications. Confirm component availability status as manufacturing schedules may vary. Ensure compatibility with existing thermal management solutions before procurement.

Selection Notes

Select this component for applications requiring integrated three-phase SiC switching with low conduction losses. Verify that the 1200 V rating aligns with system bus voltages. Check that the 11 A continuous current capability meets load requirements. Ensure gate drive circuits support the specified threshold voltage and switching characteristics.

Part Context

This part belongs to the CoolSiC™ MOSFET Generation 2 family, which offers improved performance over previous silicon carbide generations. It is designed for industrial applications such as PV inverters and motor drives. The EasyPACK C series provides a standardized form factor for efficient integration into power modules.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and thermal resistance values when considering equivalent modules from other manufacturers.

F3L11MR12W2M1C01BOMA1F3L11MR12W2M1C01BOMA1

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