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The F3L11MR12W2M1HPB19BPSA1 is a CoolSiC Trench MOSFET half-bridge module in the EasyPACK package. It features a 1200 V drain-source voltage and an implemented current of 75 A, with a repetitive peak current of 150 A. The on-resistance is typically 16 mΩ at 25°C. Operating junction temperatures range from -40°C to 175°C. The module integrates PressFIT contacts, mounting clamps, pre-applied thermal interface material, and an NTC thermistor.
Verify the specific ordering suffix B19 against official Infineon documentation to confirm exact manufacturing lot specifications. Ensure compatibility with required gate drive voltages and thermal management systems before procurement. Confirm industrial qualification standards are met for the target deployment environment.
Select this component for high-frequency switching applications requiring low conduction losses. Evaluate the thermal resistance values relative to the heatsink design. Consider the stray inductance characteristics when designing the power loop layout to minimize voltage overshoot during switching transitions.
This part belongs to the Infineon CoolSiC generation 2 industrial series. It utilizes silicon carbide trench technology to achieve superior performance compared to traditional silicon devices. The EasyPACK form factor allows for standardized mounting solutions within various power electronic converter architectures.
Consult official replacement guides for cross-referencing. Verify pinout compatibility and thermal interface requirements when substituting similar modules. Ensure that any alternative device meets or exceeds the original voltage and current ratings.
The maximum operating junction temperature is 175°C.
Yes, the module includes an integrated NTC thermistor for temperature monitoring.
The module uses PressFIT contact technology for its terminals.