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The F3L150R07W2E3B11BOMA1 is a three-phase inverter IGBT module from Infineon's Trenchstop IGBT3 series, housed in an EasyPACK package. It features a collector-emitter voltage (VCES) of 650 V and a nominal continuous DC collector current (IC nom) of 150 A at 25°C case temperature. The typical collector-emitter saturation voltage (VCEsat) is 1.45 V at 25°C. Total power dissipation is rated at 335 W. The module integrates emitter-controlled diodes and includes a built-in NTC thermistor with a nominal resistance of 5 kΩ at 25°C.
Verify the specific ordering suffix BOMA1 against official documentation to confirm exact configuration details. Ensure compatibility with PressFIT assembly processes and verify that the 650V rating aligns with system requirements. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement.
Select this component for designs requiring a 650V rating with 150A continuous current capability. Consider the low thermal resistance of the Al2O3 substrate for efficient heat dissipation. Evaluate the gate threshold voltage and internal gate resistor values to ensure proper driver interface matching and optimal switching performance within the specified operating temperature range.
This part belongs to the Infineon EasyPACK family utilizing Trenchstop IGBT3 technology. It is designed as a compact solution for medium-power industrial and renewable energy applications. The module integrates six switches (three IGBTs and three diodes) into a single unit, simplifying circuit board layout and reducing parasitic inductance compared to discrete solutions.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify mechanical footprint and electrical parameters against alternative models if sourcing changes occur.