F3L200R07W2S5FB11BOMA1

Overview

The Infineon F3L200R07W2S5F_B11 is a three-phase inverter IGBT module utilizing TRENCHSTOP™ 5 technology and CoolSiC™ Schottky diodes. It features a collector-emitter voltage (VCES) of 650 V, an implemented collector current (ICN) of 200 A, and a continuous DC collector current (ICDC) of 95 A at TH = 65°C. The module incorporates PressFIT contact technology and integrated NTC thermistors for thermal monitoring. Key electrical parameters include a typical VCEsat of 1.20 V at Tvj = 25°C and a gate threshold voltage (VGEth) of 4.00 V. Thermal resistance from junction to heatsink is 0.814 K/W per IGBT and 1.15 K/W per diode.

Feature Summary

• Integrates TRENCHSTOP™ 5 IGBTs with low switching losses and CoolSiC™ Gen 5 Schottky diodes featuring increased blocking voltage capability up to 650 V.
• Utilizes PressFIT connection technology combined with rugged mounting via integrated clamps for secure assembly.
• Features an Al2O3 substrate designed for low thermal resistance and compact physical design.
• Includes built-in NTC thermistor for precise temperature monitoring within the module.

Applications

• Three-level applications
• Motor drives
• Solar applications
• UPS systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm mechanical interface and terminal configuration. Ensure compatibility with PressFIT tooling requirements during integration. Confirm that the selected variant matches the required thermal management specifications for the intended operating environment.

Selection Notes

Select this component based on the 650 V rating and 200 A implemented current capacity. Evaluate the thermal resistance values against the system's cooling capabilities. Consider the low stray inductance of 20 nH for high-frequency switching performance. Verify that the gate drive voltages align with the specified ±15 V operational range.

Part Context

This module belongs to the EasyPACK™ family, which provides standardized form factors for power electronics. It combines Infineon's latest silicon carbide diode technology with advanced trench-gate IGBTs to optimize efficiency in medium-power conversion systems.

Replacement Considerations

Direct replacements must match the 650 V rating, 200 A current class, and EasyPACK™ mechanical footprint. Verify that substitute components support PressFIT termination and contain equivalent CoolSiC™ diode characteristics to maintain switching performance.

FAQ

What is the maximum repetitive peak reverse voltage for the integrated diodes?

The maximum repetitive peak reverse voltage (VRRM) for all integrated diodes (D1-D6) is 650 V at a junction temperature of 25°C.

How does the module handle short-circuit conditions?

The module supports a short-circuit withstand time of up to 10 µs at Tvj = 150°C with a short-circuit current (ISC) of 1600 A under specified test conditions.

What is the rated resistance of the integrated NTC thermistor?

The NTC thermistor has a rated resistance (R25) of 5.00 kΩ at 25°C, with a B-value of 3375 K between 25°C and 50°C.