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The F3L200R12N2H3B48BPSA1 is a three-level IGBT module from Infineon Technologies, designed for high-efficiency power conversion. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 200 A at 25°C. The module utilizes the EasyPACK 2B package and belongs to the High Speed IGBT N2 series. Key electrical parameters include a saturation voltage of 1.55 V and a maximum power dissipation of 600 W. It operates within a temperature range of -40°C to +150°C.
Verify the specific suffix B48 against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing gate driver requirements and cooling solutions before integration into the final assembly.
Select this component for applications requiring high current density and low conduction losses in three-level topologies. Compare the 200 A rating and 1.55 V saturation voltage against system thermal constraints and switching frequency requirements to ensure optimal performance.
This part belongs to Infineon's High Speed IGBT family, specifically the N2 generation. It is an evolution of previous H3 series modules, offering improved switching characteristics while maintaining the standard EasyPACK 2B form factor for backward compatibility in many designs.
Direct replacements may include the F3L200R12W2H3_B11 or F3L200R12N3H7F-B66. Verify that the alternative part number matches the exact voltage, current, and package dimensions required by the original design specifications.