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The F3L200R12W2H3PB11BPSA1 is a 1200 V, 200 A three-level IGBT module from Infineon's High Speed IGBT H3 series. It utilizes EasyPACK packaging and silicon technology. Key electrical parameters include a collector-emitter saturation voltage of 1.55 V at 25°C, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 600 W. The module operates within a temperature range of -40°C to +150°C.
Verify the exact part number suffix against official Infineon documentation, as variations such as B11 or BPSA1 may indicate specific tape-and-reel or tray packaging options. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Ensure the ordering code matches the required thermal interface and pinout specifications for the target application.
Select this component for applications requiring high current handling with low conduction losses. The 1.55 V saturation voltage supports efficient power conversion. Verify that the system cooling solution can manage the 600 W power dissipation rating. Ensure the drive circuitry supports the specific gate charge requirements typical of the High Speed IGBT H3 series for optimal switching times.
This module belongs to Infineon's EasyPACK family, designed for compact power electronics. The F3L prefix indicates a three-phase inverter configuration. The H3 series denotes high-speed switching capabilities, distinguishing it from standard frequency variants within the broader IGBT portfolio.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official replacement guide or cross-reference tools for verified alternatives based on specific electrical and mechanical constraints.