F3L300R12MT4B23BOSA1

$197.28

Description：IGBT MOD 1200V 450A 1550W
Series：EconoDUAL™ 3

SKU:5cb5974cccab Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 450A 1550W
Series：EconoDUAL™ 3
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 300A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：450 A
Power - Max：1550 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：19 nF @ 25 V

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F3L300R12MT4B23BOSA1

Overview

The F3L300R12MT4B23BOSA1 is an EconoDUAL™3 IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled HE Diode. It features a 1200 V collector-emitter voltage rating with a continuous DC collector current of 300 A at TC=100°C, extending to 450 A at TC=25°C. The repetitive peak collector current reaches 600 A. The module incorporates an integrated NTC thermistor rated at 5.00 kΩ at 25°C for thermal monitoring. Electrical characteristics include a typical VCEsat of 1.75 V at Tvj=25°C and a forward voltage of 1.65 V for the diode. Thermal resistance from junction to case is 0.097 K/W per IGBT and 0.145 K/W per diode.

Feature Summary

EconoDUAL™3 housing with isolated base plate
Trench/Fieldstop IGBT4 technology for low switching losses
Emitter Controlled HE Diode integration
Integrated NTC thermistor for temperature monitoring

Applications

3-Level inverter applications
Industrial motor drives
Medium power converters

Procurement Notes

Verify the specific ordering suffix B23 against official Infineon documentation to confirm material and revision status. Confirm RoHS compliance details through the manufacturer's latest environmental declarations. Ensure that the module serial number and datecode on the physical unit match the production records provided by the authorized distributor.

Selection Notes

Select this component for designs requiring high robustness and low saturation voltage within the 1200 V class. Evaluate the thermal management requirements based on the specified RthJC values and the maximum operating junction temperature of 150°C. Ensure gate drive circuits accommodate the internal gate resistor and required voltage levels for optimal switching performance.

Part Context

This module belongs to the EconoDUAL™3 series, designed for medium power industrial applications. It utilizes Infineon's IGBT4 generation, which combines trench gate architecture with field-stop technology to optimize the trade-off between conduction and switching losses compared to previous generations.