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F3L3MR12W3M1HH11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is EASY STANDARD PLUS. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for F3L3MR12W3M1HH11BPSA1
- Description：EASY STANDARD PLUS
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for F3L3MR12W3M1HH11BPSA1
FET, MOSFET Arrays Overview
The F3L3MR12W3M1H_H11 is an EasyPACK module integrating CoolSiC Trench MOSFETs and IGBTs. It features a 1200 V drain-source voltage (VDSS) for the MOSFETs with a nominal current of 200 A and repetitive peak current of 400 A. The IGBTs have a collector-emitter voltage (VCES) of 950 V, nominal current of 200 A, and repetitive peak current of 400 A. The module utilizes PressFIT contact technology and includes an integrated NTC temperature sensor.
FET, MOSFET Arrays Feature Summary
- Integrates CoolSiC Trench MOSFETs and IGBTs within a single EasyPACK package
- Utilizes PressFIT contact technology for robust mechanical mounting
- Includes high-current pins to support high-amperage applications
- Features an integrated NTC temperature sensor for thermal monitoring
FET, MOSFET Arrays Applications
- Three-level inverter topologies
- High-frequency switching power converters
- Solar photovoltaic systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix H11 against official Infineon documentation to confirm terminal configuration and packaging details. Ensure gate drive voltages align with the specified ranges for both the MOSFET and IGBT sections to prevent device damage. Confirm that the application environment meets the industrial qualification standards defined in IEC 60747, 60749, and 60068.
FET, MOSFET Arrays Selection Notes
Select this component when designing three-level or high-frequency applications requiring mixed SiC and silicon technologies. The combination of low-switching-loss SiC MOSFETs and robust IGBTs allows for optimized performance across different switching conditions. Consider the thermal resistance values and operating temperature limits when designing the heat sink interface.
FET, MOSFET Arrays Part Context
This module belongs to Infineon's EasyPACK series, designed for compact and efficient power conversion. It combines the advantages of wide-bandgap SiC semiconductors with traditional silicon IGBTs. The packaging supports high current density and rugged mounting, making it suitable for demanding industrial and renewable energy environments.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Generic equivalents may not match the specific hybrid topology or electrical characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
