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The F3L400R07ME4B22BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 series and EconoDUAL trademark family. It features a half-bridge configuration with a maximum collector-emitter voltage of 650 V. The continuous collector current at 25°C is rated at 450 A, while the collector-emitter saturation voltage is 1.55 V. Gate-emitter leakage current is specified at 100 nA, and power dissipation reaches 1.15 kW. The device operates within a temperature range of -40°C to +150°C and weighs 345 g.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation before integration. Check for end-of-life notices as availability may be restricted. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to assembly.
Select this module for applications requiring high current capacity within a standard half-bridge topology. Evaluate thermal management requirements against the 1.15 kW power dissipation rating. Ensure gate drive voltages remain within safe operating limits relative to the specified leakage parameters. Consider the physical dimensions and weight for mechanical design constraints.
This component is part of Infineon's broader IGBT module portfolio, specifically utilizing the EconoDUAL form factor. It shares technological lineage with other Trenchstop IGBT4 devices but offers distinct current and voltage ratings tailored for medium-power industrial applications.
Direct substitutes include FF400R07KE4 and FF300R07ME4BOSA1, though current ratings and specific packaging details differ. Verify pin compatibility and thermal characteristics when considering alternative models from the same manufacturer series.