F3L400R10W3S7FB11BPSA1

Overview

The Infineon F3L400R10W3S7F_B11 is a 950 V EasyPACK™ module integrating TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diodes with PressFIT technology. It features three distinct IGBT configurations: T1/T4 (IC nom 400 A, VCE(sat) typ 1.48 V), T2/T3 (IC nom 400 A, VCE(sat) typ 1.04 V), and T5/T6 (IC nom 200 A, VCE(sat) typ 1.88 V). The module includes integrated CoolSiC™ Gen 5 diodes (D1/D4, D2/D3 rated 200 A; D5/D6 rated 100 A, 1200 V) and an NTC thermistor (R25 = 5 kΩ). Key electrical parameters include a maximum collector-emitter voltage of 950 V, short-circuit withstand capability up to 1200 A for main legs, and a stray inductance of 15 nH.

Feature Summary

• Combines TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diode technologies for optimized switching performance.
• Utilizes PressFIT contact technology for robust mechanical connection without soldering.
• Features low-inductive design to minimize parasitic effects during high-speed switching.
• Includes an integrated NTC temperature sensor for precise thermal monitoring.

Applications

• 3-level applications
• Solar applications

Procurement Notes

Verify the specific suffix against official documentation, as ordering codes may indicate variations in packaging or qualification status not detailed in standard datasheets. Confirm RoHS compliance and availability through authorized distributors. Ensure the component matches the required pin grid and mounting torque specifications for your PCB layout.

Selection Notes

Select this module for designs requiring high current density and low switching losses in 3-level topologies. Consider the specific IGBT leg ratings (T1-T6) based on the circuit's current requirements. Verify that the gate drive voltages align with the ±15 V recommendation and that the thermal management system accommodates the specified RthJH values.

Part Context

This part belongs to Infineon’s EasyPACK™ family, designed for industrial and solar inverters. It represents a transition to 3-level architectures using advanced semiconductor generations. The module integrates multiple power devices into a single compact package to reduce system complexity and improve reliability compared to discrete solutions.

Replacement Considerations

Direct replacements are limited due to the specific combination of IGBT7 and CoolSiC™ diodes in a 3-level configuration. Evaluate modules with similar PressFIT interfaces and comparable VCES and IC ratings. Ensure any substitute supports the required 3-level topology and has compatible thermal resistance characteristics.

FAQ

What is the difference between the IGBT legs T1/T4, T2/T3, and T5/T6?

T1/T4 and T2/T3 are rated for 400 A nominal current but differ in saturation voltage (T1/T4 ~1.48 V, T2/T3 ~1.04 V). T5/T6 is rated for 200 A nominal current with a higher saturation voltage (~1.88 V), typically used for neutral point clamping in 3-level circuits.

What type of diodes are integrated in this module?

The module integrates CoolSiC™ Schottky diodes from Generation 5. Diodes D1/D4 and D2/D3 are rated for 950 V and 200 A, while D5/D6 are rated for 1200 V and 100 A.

How is the module connected to the PCB?

The module uses PressFIT contact technology, which allows for solderless mounting directly into plated-through holes on the PCB, ensuring a robust mechanical and electrical connection.