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The F3L400R12PT4P_B26 is a three-level IGBT module utilizing Trench/Fieldstop IGBT4 technology within the EconoPACK™ 4 housing. It features an active Neutral Point Clamp 2 topology and PressFIT connection technology with pre-applied thermal interface material. The module supports a collector-emitter voltage of 1200 V, a continuous DC collector current of 400 A at TH = 65°C, and a repetitive peak collector current of 800 A. Key electrical parameters include a typical VCEsat of 1.75 V at Tvj = 25°C for T1/T4 switches, and a gate charge of 3.3 µC. Thermal resistance from junction to heatsink is 0.105 K/W per IGBT.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical and electrical configurations. Ensure compatibility with PressFIT assembly tools and verify that the pre-applied thermal interface material meets storage and handling requirements as defined in application note AN2012-07. Confirm RoHS compliance status through the manufacturer's latest environmental declarations.
Select this component for high-power three-level inverter designs requiring low switching losses and extended operating temperatures up to 150°C. Evaluate the stray inductance of 38 nH and the specific thermal resistance values for both IGBTs and diodes during heat sink design. Ensure the drive circuit provides appropriate gate voltages and resistances to manage the specified turn-on and turn-off energy losses effectively.
This module belongs to the EconoPACK™ 4 series, designed for compact industrial power conversion. It integrates Trench/Fieldstop IGBT4 technology to optimize the balance between conduction and switching losses. The inclusion of an NTC thermistor allows for precise temperature monitoring within the module structure.
Direct replacements must match the 1200V/400A rating, three-level topology, and EconoPACK™ 4 footprint. Verify that alternative components support PressFIT termination and have comparable thermal resistance characteristics to maintain system cooling performance.
The module supports an extended operating junction temperature (Tvj op) of up to 150°C.
The module utilizes PressFIT contact technology for its electrical terminals.
For the T1/T4 IGBTs, the typical VCEsat is 1.75 V at Tvj = 25°C and IC = 400 A.