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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F3L50R06W1E3_B11 is a six-pack IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 technology and Emitter Controlled 3 diodes. It features a low-inductive EasyPACK design with PressFIT connections and an integrated NTC thermistor. Key electrical parameters include a collector-emitter voltage (VCES) of 600 V, a nominal continuous DC collector current (IC nom) of 50 A at TC=80°C, and a repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCEsat) is 1.45 V at Tvj=25°C. The module incorporates an Al2O3 substrate for low thermal resistance and operates within a junction temperature range of -40°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm mechanical and electrical configurations. Ensure compatibility with system requirements regarding insulation voltage and thermal management before procurement. Cross-reference datasheet revision numbers to validate technical specifications.
Select this module for applications requiring 600 V blocking capability and up to 50 A continuous current. Consider the low inductive structure for high-frequency switching environments. Verify that the operating junction temperature remains within the specified limits during thermal analysis.
This component belongs to the EasyPACK series of IGBT modules. It integrates Trenchstop IGBT3 technology with Emitter Controlled 3 diodes. The module is designed for industrial power conversion applications, offering a compact form factor with integrated thermal sensing capabilities.
Public confirmed substitute part numbers are not available in the provided source material.