FET, MOSFET Arrays F3L6MR20W2M1HB70BPSA1 product image

F3L6MR20W2M1HB70BPSA1

$195.52
  • Description:F3L6MR20W2M1HB70BPSA1
  • Series:EasyPACK™

SKU:74a5074a7dc3 Category: Brand:

  
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F3L6MR20W2M1HB70BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is F3L6MR20W2M1HB70BPSA1. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F3L6MR20W2M1HB70BPSA1

  • Description:F3L6MR20W2M1HB70BPSA1
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):2000V (2kV)
  • Current - Continuous Drain (Id) @ 25°C:155A (Tj)
  • Rds On (Max) @ Id, Vgs:8.7mOhm @ 100A, 18V
  • Vgs(th) (Max) @ Id:5.15V @ 112mA
  • Gate Charge (Qg) (Max) @ Vgs:297nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds:24100pF @ 1.2kV
  • Power - Max:-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

FET, MOSFET Arrays Overview

The F3L6MR20W2M1HB70BPSA1 is a silicon carbide MOSFET module designed for high-power applications. It features a three-level inverter configuration with N-channel transistors. The device supports a drain-source voltage of 2 kV and delivers a continuous current of 155 A. Its on-resistance is specified at 8700 microohms. The module utilizes the EasyPACK package format, enabling efficient thermal management and compact integration into power electronic systems.

FET, MOSFET Arrays Feature Summary

  • Utilizes CoolSiC technology for enhanced efficiency and thermal performance
  • Designed specifically for three-level inverter topologies
  • Integrates high-current pins to support robust electrical connections

FET, MOSFET Arrays Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • Solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm that the thermal interface material and mounting hardware meet the mechanical specifications outlined in the official Infineon documentation before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing systems requiring high voltage blocking capabilities combined with moderate current ratings. The three-level architecture offers reduced switching losses compared to traditional two-level designs, making it suitable for applications prioritizing efficiency and power density within the EasyPACK form factor constraints.

FET, MOSFET Arrays Part Context

This part belongs to the M1H series of CoolSiC modules from Infineon Technologies. It represents a specialized solution for mid-power applications where silicon-based devices may face limitations in switching speed or thermal handling. The module integrates multiple discrete components into a single reliable package.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other Infineon EasyPACK CoolSiC modules with similar voltage and current ratings, such as the FF6MR20W2M1HB70BPSA1 for half-bridge configurations or variants within the same M1H family. Ensure pinout and thermal characteristics match before substitution.

F3L6MR20W2M1HB70BPSA1F3L6MR20W2M1HB70BPSA1
$195.52
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