F3L75R12W1H3B11BPSA1

F3L75R12W1H3B11BPSA1

$33.81
  • Description:IGBT MOD 1200V 45A 275W
  • Series:-

SKU:6e4e0c0dc381 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 45A 275W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:Single Chopper
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 30A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):45 A
  • Power - Max:275 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:4.4 nF @ 25 V

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F3L75R12W1H3B11BPSA1

Overview

The F3L75R12W1H3B11BPSA1 is a 3-level IGBT module featuring T1-T4 switches rated at 1200 V and 75 A, alongside T2/T3 switches rated at 650 V and 50 A. It utilizes an Al2O3 substrate with low thermal resistance and incorporates PressFIT contact technology for rugged mounting via integrated clamps. The module includes an NTC thermistor (5 kΩ) for temperature monitoring and offers low stray inductance (30 nH). Designed for industrial applications, it supports operation up to 150°C junction temperature.

Feature Summary

  • Low-inductive design with minimized switching losses
  • Integrated mounting clamps for robust mechanical assembly
  • Built-in NTC thermistor for reliable thermal monitoring

Applications

  • 3-Level Applications
  • Solar Applications

Procurement Notes

Verify the specific ordering suffix B11 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with PressFIT installation tools and verify that the continuous pin current limit of 25A RMS per connector pin meets system requirements during procurement planning.

Selection Notes

Select this module for designs requiring asymmetric voltage ratings within a single package. Confirm that the gate drive circuitry accommodates the specified internal gate resistor values and peak currents. Validate thermal management solutions against the provided transient thermal impedance data for the intended duty cycle.

Part Context

This component belongs to the F3L series of 3-level IGBT modules from Infineon Technologies. It is engineered for high-power density applications where reduced switching losses and compact packaging are critical. The module integrates both high-voltage and medium-voltage switches to facilitate advanced inverter topologies.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical PinFIT dimensions, electrical ratings, and thermal characteristics to guarantee mechanical and functional compatibility without redesigning the host PCB or cooling system.

F3L75R12W1H3B11BPSA1F3L75R12W1H3B11BPSA1
$33.81
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