F3L8MR12W2M1HPB11BPSA1

$108.05

Description：MOSFET 2N-CH 1200V 85A AG-EASY2B
Series：EasyPACK™

SKU:0420d4ddb253 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

F3L8MR12W2M1HPB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 85A AG-EASY2B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F3L8MR12W2M1HPB11BPSA1

Description：MOSFET 2N-CH 1200V 85A AG-EASY2B
Series：EasyPACK™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：85A (Tj)
Rds On (Max) @ Id, Vgs：12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id：5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：8800pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-EASY2B
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for F3L8MR12W2M1HPB11BPSA1

F3L8MR12W2M1HPB11BPSA1

FET, MOSFET Arrays Overview

The F3L8MR12W2M1HP_B11 is an EasyPACK™ module integrating CoolSiC™ Trench MOSFETs and IGBTs for three-level topologies. It features a 1200 V drain-source voltage (VDSS) with a continuous DC current of 85 A at 175 °C, and a 650 V collector-emitter voltage (VCES) with 90 A continuous DC current. The module utilizes PressFIT contact technology and includes an integrated NTC thermistor.

FET, MOSFET Arrays Feature Summary

Integrates CoolSiC™ Trench MOSFETs and IGBTs within a single package to support three-level circuit architectures.
Features rugged mounting through integrated clamps and utilizes PressFIT contact technology for secure assembly.
Includes an integrated NTC temperature sensor for precise thermal monitoring during operation.

FET, MOSFET Arrays Applications

Solar applications
Three-level applications
DC charger for EV

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix against official Infineon documentation to confirm specific manufacturing revisions or regional compliance variations. Ensure that the selected gate drivers are compatible with the specified voltage thresholds and internal resistance values. Confirm that the application environment adheres to the industrial qualification standards defined in the datasheet.

FET, MOSFET Arrays Selection Notes

Select this component when designing three-level power conversion systems requiring high current density and low switching losses. Consider the thermal resistance values and maximum operating temperatures when designing the heat sink interface. Verify compatibility with recommended gate drive voltages to optimize performance and ensure long-term reliability under overload conditions.

FET, MOSFET Arrays Part Context

This module belongs to the EasyPACK™ family utilizing CoolSiC™ technology. It combines silicon carbide MOSFETs with silicon IGBTs to leverage the fast switching capabilities of SiC and the robust conduction characteristics of IGBTs. This hybrid approach is optimized for efficiency in medium-voltage power electronics applications.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon replacement guides for direct equivalents. Verify pinout compatibility and electrical ratings before substituting with other modules from the EasyPACK™ series or different manufacturers.