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The F4100R12KS4BOSA1 is a four-pack IGBT module from Infineon's IGBT2 Fast series, designed for inverter applications. It features a 1200 V collector-emitter voltage rating and supports continuous DC collector currents of 130 A at 25°C or 100 A at 65°C case temperature. The module integrates fast IGBT chips with short tail current characteristics and anti-parallel diodes. Key electrical parameters include a typical saturation voltage of 3.2 V at 25°C and a gate threshold voltage ranging from 4.5 V to 6.5 V. Thermal performance is defined by a junction-to-case thermal resistance of 0.19 K/W per IGBT and 0.32 K/W per diode. The unit weighs 300 g and includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C.
Verify the specific ordering suffix BOSA1 against official documentation to confirm manufacturing details and compliance status. Ensure that the component matches the required package type and pin configuration for the target circuit design before finalizing procurement orders.
Select this module for applications requiring a 1200 V rating and up to 130 A continuous current capability. Consider the 0.19 K/W junction-to-case thermal resistance when designing heatsinking solutions. Verify that the operating junction temperature range of -40°C to 125°C aligns with the environmental requirements of the intended system.
This component belongs to the EconoPACK family of modules, which are standardized power modules widely used in industrial power electronics. The IGBT2 Fast series specifically targets applications needing improved switching speed and reduced conduction losses compared to standard IGBT technologies.
Direct replacements must match the 1200 V / 100 A-130 A rating and EconoPACK form factor. Consult official substitution lists for updated series components with similar thermal and electrical characteristics.
The maximum repetitive peak collector current (ICRM) is 200 A for a pulse duration of 1 ms.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for one minute.
The typical forward voltage (VF) of the diode is 2.00 V at a forward current of 100 A and a junction temperature of 25°C.