F411MR12W2M1HB70BPSA1

$138.50

Description：LOW POWER EASY
Series：-

SKU:613bf4cf2bb9 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：LOW POWER EASY
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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F411MR12W2M1HB70BPSA1

Overview

The Infineon F411MR12W2M1HB70BPSA1 is a CoolSiC™ Trench MOSFET module in the EasyPACK™ package. It features a 1200 V drain-source voltage and supports a continuous DC drain current of 75 A at 175 °C junction temperature, with a repetitive peak current of 150 A. The on-state resistance is typically 10.8 mΩ at 25 °C. The module utilizes PressFIT contact technology and includes an integrated NTC thermistor for thermal monitoring. It operates within a junction temperature range of -40 °C to 175 °C.

Feature Summary

Low inductive design for high-frequency switching applications
PressFIT contact technology for robust mechanical connection
Integrated NTC temperature sensor for thermal management
AlN substrate providing low thermal resistance

Applications

High-frequency switching applications
DC/DC converters
UPS systems
EV DC chargers

Procurement Notes

Verify component authenticity by checking the module label code against official Infineon standards. Ensure the ordering suffix matches the required specifications exactly. Confirm that the product meets industrial application validation requirements according to relevant IEC standards before integration into final designs.

Selection Notes

Select this module for designs requiring high power density and efficient thermal dissipation. Consider the recommended gate voltages and external gate resistors to optimize switching losses. Verify that the system's thermal management can handle the junction-to-heat sink thermal resistance under maximum operating conditions.

Part Context

This part belongs to the Infineon CoolSiC™ M1H series, utilizing trench MOSFET technology for improved reliability and lower switching losses compared to planar devices. It is designed for use in demanding power electronics environments where efficiency and compact size are critical performance factors.

Replacement Considerations

Consult official Infineon documentation for qualified alternative part numbers within the same CoolSiC™ family. Ensure any substitute maintains compatible electrical ratings, package dimensions, and thermal characteristics to guarantee proper system integration.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.