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F411MR12W2M1HPB76BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for F411MR12W2M1HPB76BPSA1
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for F411MR12W2M1HPB76BPSA1
FET, MOSFET Arrays Overview
The F411MR12W2M1HPB76BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 60 A at 175 °C junction temperature, with a repetitive peak current rating of 150 A. The on-state resistance is typically 10.8 mΩ at 25 °C. The module integrates an NTC thermistor for thermal monitoring and utilizes PressFIT contact technology. It includes pre-applied thermal interface material and rugged mounting clamps.
FET, MOSFET Arrays Feature Summary
- Low switching losses and low inductive design
- High current density capability
- Integrated NTC temperature sensor
- PressFIT contact technology
FET, MOSFET Arrays Applications
- High-frequency switching applications
- DC/DC converters
- UPS systems
- EV DC chargers
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix B76 against official Infineon documentation to confirm mechanical and electrical configurations. Ensure compatibility with recommended gate drivers listed in the manufacturer's GDFinder tool. Confirm that the application environment meets the industrial validation standards defined in IEC 60747, 60749, and 60068.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring high efficiency and power density in silicon carbide applications. Consider the thermal resistance and operating temperature range when designing the cooling system. Verify gate drive requirements to optimize switching performance and ensure long-term reliability under overload conditions.
FET, MOSFET Arrays Part Context
This part belongs to the Infineon CoolSiC™ M1H series, utilizing trench MOSFET technology for improved gate oxide reliability. It is housed in the standard EasyPACK™ form factor, facilitating integration into existing power electronics architectures designed for high-voltage, high-current operations.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions to preserve system integrity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
