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Product Detailed Parameters
- Description：IGBT MODULE 1700V 230A
- Series：EconoDUAL™ 3
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：230 A
- Power - Max：-
- Current - Collector Cutoff (Max)：3 mA
- Input Capacitance (Cies) @ Vce：12 nF @ 25 V
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Overview
The F4150R17ME4B11BPSA1 is an EconoDUAL™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an emitter-controlled diode. It provides a collector-emitter voltage of 1700 V, a nominal continuous DC collector current of 150 A at TC=100°C, and a repetitive peak current of 300 A. The saturation voltage is typically 1.95 V at 25°C. Operating junction temperature ranges from -40°C to 150°C. Key electrical parameters include a gate threshold voltage of 5.8 V typ., input capacitance of 12 nF, and turn-on energy loss of 39.5 mJ at 25°C.
Feature Summary
- Utilizes Infineon Trench IGBT 4 technology for high short-circuit capability and low saturation voltage.
- Features an Al2O3 substrate with isolated base plate and PressFIT contact technology for high power density.
- Demonstrates positive temperature coefficient for VCE,sat to ensure stable parallel operation.
Applications
- High-power converters
- Medium-voltage converters
- Wind turbines
Procurement Notes
Verify the specific ordering suffix B11 against official documentation to confirm mechanical and electrical specifications. Ensure compatibility with recommended gate drivers listed in the manufacturer's guide. Confirm that the application environment meets the required insulation coordination standards defined in the datasheet.
Selection Notes
Select this component for applications requiring robust short-circuit withstand capability and high thermal stability. Evaluate the thermal resistance values (RthJC) against the system's cooling requirements. Verify that the maximum repetitive peak current rating aligns with the expected transient load conditions of the target circuit design.
Part Context
This module belongs to the Infineon EconoDUAL™3 series, designed for industrial power conversion. It integrates fourth-generation trench field-stop IGBTs with third-generation emitter-controlled diodes. The package utilizes copper base plates and aluminum oxide substrates to optimize thermal management and electrical isolation for demanding power electronics environments.
Replacement Considerations
Consult official replacement lists for updated versions within the same product family. Verify pinout compatibility and thermal interface dimensions before substituting. Cross-reference electrical ratings to ensure equivalent performance in the existing system architecture.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature under switching conditions is 150°C.
Does the module include an NTC thermistor?
No, the F4150R17ME4B11BPSA1 does not include an integrated NTC thermistor.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) of the diode is 1.80 V at 25°C with a forward current of 150 A.
