FET, MOSFET Arrays F415MR12W2M1B76BOMA1 product image

F415MR12W2M1B76BOMA1

  • Description:MOSFET 4N-CH 1200V 75A AG-EASY1B
  • Series:EasyPACK™ CoolSiC™

SKU:b5acd45d238a Category: Brand:

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F415MR12W2M1B76BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 4N-CH 1200V 75A AG-EASY1B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F415MR12W2M1B76BOMA1

  • Description:MOSFET 4N-CH 1200V 75A AG-EASY1B
  • Series:EasyPACK™ CoolSiC™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:75A (Tj)
  • Rds On (Max) @ Id, Vgs:15mOhm @ 75A, 15V
  • Vgs(th) (Max) @ Id:5.55V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs:186nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:5520pF @ 800V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY1B-2
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for F415MR12W2M1B76BOMA1

F415MR12W2M1B76BOMA1

FET, MOSFET Arrays Overview

The F415MR12W2M1B76BOMA1 is a CoolSiC MOSFET module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features an N-Channel configuration within a dual setup. The component is housed in the EasyDUAL PressFIT package, designed for press-fit installation. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 190 A, and a typical on-resistance of 5.8 mOhms at 25°C. The gate-source voltage range spans from -10 V to +23 V, with a threshold voltage typically around 4.5 V. Operating temperatures range from -40°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

  • Utilizes Silicon Carbide (SiC) semiconductor technology for high-performance power switching.
  • Features a dual N-Channel configuration integrated into a single module.
  • Designed with a PressFIT mounting style for secure board connection without soldering.
  • Housed in the EasyDUAL package format for standardized integration.

FET, MOSFET Arrays Applications

  • Electric Vehicle (EV) On-Board Chargers (OBC)
  • DC-DC Converters
  • Industrial Motor Drives

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix B76 against official Infineon documentation to confirm exact manufacturing lot or revision details. Confirm availability status as distribution channels may vary. Ensure compatibility with existing thermal interface materials and PCB footprints designed for the EasyDUAL PressFIT form factor before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high efficiency and thermal stability due to SiC properties. The 1.2 kV rating suits medium-voltage systems. Verify that the 190 A current rating meets peak load requirements. Ensure the driving circuitry supports the specified gate voltage window of -10 V to +23 V for reliable operation.

FET, MOSFET Arrays Part Context

This part belongs to the CoolSiC MOSFET G1 module family from Infineon. It is part of the EasyDUAL series, which standardizes mechanical dimensions for easy replacement and integration in various power electronics designs. The PressFIT variant eliminates soldering steps, enhancing reliability in high-vibration environments.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the same EasyDUAL PressFIT family with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics if replacing with modules from other manufacturers or different Infineon series.

F415MR12W2M1B76BOMA1F415MR12W2M1B76BOMA1

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