F4200R17N3E4BPSA1

F4200R17N3E4BPSA1

$110.94
  • Description:IGBT MOD 1700V 200A 20MW
  • Series:EconoPACK™ 3

SKU:6766baabf72b Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1700V 200A 20MW
  • Series:EconoPACK™ 3
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Full Bridge
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:18 nF @ 25 V

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F4200R17N3E4BPSA1

Overview

The F4200R17N3E4BPSA1 is an EconoPACK™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 200 A at TC = 95°C, with a repetitive peak collector current (ICRM) of 400 A. The typical collector-emitter saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C. Operating junction temperature ranges from -40°C to 150°C. Key electrical parameters include a gate threshold voltage (VGEth) of 5.80 V, input capacitance (Cies) of 18.0 nF, and internal gate resistance (RGint) of 3.8 Ω. Thermal resistance from junction to case is 0.130 K/W per IGBT.

Feature Summary

  • Integrates Trench/Fieldstop IGBT4 technology for low saturation voltage and positive temperature coefficient.
  • Includes an integrated NTC thermistor for precise thermal monitoring.
  • Features an isolated copper base plate utilizing solder contact technology.
  • Designed for high power density within the standard EconoPACK™3 housing.

Applications

  • High-power converters
  • Medium-voltage drives

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference datasheet versioning to guarantee compatibility with design requirements.

Selection Notes

Evaluate the thermal resistance values and maximum operating temperatures to ensure adequate cooling solutions are implemented. Consider the stray inductance and switching characteristics when designing the gate drive circuitry. Confirm that the mechanical mounting torque aligns with the specified requirements for reliable assembly.

Part Context

This component belongs to the F4-200R17N3E4 series, representing Infineon's advanced IGBT modules. It utilizes the EconoPACK™3 package format, which is widely recognized for its compact size and efficient thermal management capabilities in industrial power electronics applications.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume pin-to-pin compatibility with other packages without explicit manufacturer confirmation.

FAQ

What is the maximum short-circuit withstand time?

The module can withstand a short-circuit condition for up to 10 µs under specified conditions (VCC = 1000 V, ISC = 900 A).

What is the rated resistance of the integrated NTC sensor?

The NTC thermistor has a rated resistance (R25) of 5.00 kΩ at 25°C.

What is the isolation test voltage?

The isolation test voltage is 3.4 kV RMS at 50 Hz for 1 minute.

F4200R17N3E4BPSA1F4200R17N3E4BPSA1
$110.94
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