FET, MOSFET Arrays F423MR12W1M1PB11BPSA1 product image

F423MR12W1M1PB11BPSA1

$131.93
  • Description:MOSFET 4N-CH 1200V 50A AG-EASY1B
  • Series:EasyPACK™

SKU:22870500d3e2 Category: Brand:

  
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F423MR12W1M1PB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 4N-CH 1200V 50A AG-EASY1B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F423MR12W1M1PB11BPSA1

  • Description:MOSFET 4N-CH 1200V 50A AG-EASY1B
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:50A
  • Rds On (Max) @ Id, Vgs:22.5mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id:5.5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs:124nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:3.68nF @ 800V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY1B-2
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for F423MR12W1M1PB11BPSA1

F423MR12W1M1PB11BPSA1

FET, MOSFET Arrays Overview

The F423MR12W1M1PB11BPSA1 is a Silicon Carbide (SiC) MOSFET module manufactured by Infineon Technologies. It features a full-bridge configuration with four N-channel devices. The module supports a drain-source voltage of 1.2 kV and provides a continuous current rating of 50 A. Key electrical parameters include an on-resistance of 0.0225 ohms, a maximum gate charge of 124 nC at 15 V, and a maximum input capacitance of 3.68 nF at 800 V.

FET, MOSFET Arrays Feature Summary

  • Utilizes Silicon Carbide technology for high-efficiency power switching.
  • Integrates a full-bridge topology within a single discrete semiconductor module.
  • Designed for robust operation in high-voltage applications.

FET, MOSFET Arrays Applications

  • High-frequency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet version and ordering suffix to ensure compatibility with your thermal management design. Confirm that the package dimensions and terminal layout match your PCB or busbar requirements. Check for any recent lifecycle notifications regarding availability or recommended replacements before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a compact full-bridge SiC solution is required. The 1.2 kV rating suits medium-voltage applications. Ensure the 50 A current capability meets peak load demands. Consider the 0.0225 ohm resistance for conduction loss calculations. Verify gate drive voltage limits against the specified 15 V gate charge condition.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's CoolSiC MOSFET portfolio, which focuses on silicon carbide technology for superior performance compared to traditional silicon. The M1H series designation indicates specific generation characteristics. As a discrete module, it offers higher power density than individual discrete components.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential cross-references or next-generation upgrades if this specific model is discontinued or unavailable.

F423MR12W1M1PB11BPSA1F423MR12W1M1PB11BPSA1
$131.93
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