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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F43L50R07W2H3FB11BPSA2 is a 650 V EasyPACK module featuring High-Speed IGBT H3 and CoolSiC Schottky Diode Gen 5. It includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. The inverter IGBT has a continuous collector current of 50 A, while the 3-level IGBT supports 30 A. The module utilizes PressFIT technology for connection and provides 3 kV AC isolation. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a gate-emitter peak voltage of ±20 V, and a junction temperature range from -40°C to 150°C.
Verify the specific ordering suffix BPSA2 against official Infineon documentation to confirm compliance with RoHS directives and halogen-free requirements. Ensure that the PressFIT termination method aligns with the target PCB design specifications before procurement. Confirm availability through authorized distribution channels as manufacturing lead times may vary.
Select this module for designs requiring high efficiency in 3-level topologies or motor drive inverters. The combination of IGBT H3 and SiC diodes minimizes switching losses. Verify that the system can accommodate the PressFIT mounting force of 40-80 N per clamp. Ensure the cooling solution maintains the junction temperature within the specified operating range under expected load conditions.
This component belongs to the Infineon EasyPACK series, designed for compact power conversion. It integrates advanced semiconductor technologies to enhance performance in industrial and renewable energy applications. The module format facilitates easy integration into modern power electronics systems while maintaining robust mechanical and electrical characteristics.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 650 V rating, EasyPACK footprint, and PressFIT termination style. Verify that thermal resistance and switching characteristics are compatible with the existing design constraints.