F445MR12W1M1B76BPSA1

$49.78

Description：MOSFET 4N-CH 1200V 25A AG-EASY1B
Series：EasyPACK™ CoolSiC™

SKU:862fd072efa1 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

F445MR12W1M1B76BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 4N-CH 1200V 25A AG-EASY1B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F445MR12W1M1B76BPSA1

Description：MOSFET 4N-CH 1200V 25A AG-EASY1B
Series：EasyPACK™ CoolSiC™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：25A (Tj)
Rds On (Max) @ Id, Vgs：45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id：5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：1840pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-EASY1B-2
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for F445MR12W1M1B76BPSA1

F445MR12W1M1B76BPSA1

FET, MOSFET Arrays Overview

The Infineon F445MR12W1M1B76BPSA1 is a CoolSiC Trench MOSFET module in an EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 25 A at 175 °C junction temperature. The device utilizes PressFIT contact technology and includes an integrated NTC temperature sensor. Key electrical parameters include a maximum on-resistance of 66 mΩ at 150 °C, a gate threshold voltage range of 3.45 V to 5.55 V, and a total gate charge of 0.062 µC. The module provides low stray inductance of 14 nH and operates within a junction temperature range of -40 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

Integrated NTC thermistor for precise thermal monitoring
PressFIT contact technology for robust mechanical mounting
Low inductive design with integrated mounting clamps

FET, MOSFET Arrays Applications

DC/DC converters
High frequency switching applications
Welding equipment
EV DC chargers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix B76 against official documentation to confirm packaging details. Confirm that the component meets industrial application standards per IEC 60747, 60749, and 60068. Ensure the final assembly design accounts for the specified mounting force requirements per clamp. Validate that the intended operating conditions remain within the absolute maximum ratings defined in the datasheet.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency power conversion requiring low switching losses and high current density. Consider the 1200 V rating and 25 A continuous current capability for compact designs. Evaluate the thermal resistance of 1.82 K/W for heatsink sizing. Verify compatibility with the PressFIT installation method and ensure the control circuit supports the required gate voltage levels.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon CoolSiC™ generation 2 product family, utilizing silicon carbide trench MOSFET technology. It is housed in the EasyPACK™ form factor, designed for industrial power electronics. The module integrates both the power semiconductor and a temperature sensing element into a single ruggedized unit suitable for demanding environments.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, thermal characteristics, and electrical ratings against the original datasheet specifications.