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The F450R12KS4B11BOSA1 is a single IGBT module with an integrated anti-parallel diode, utilizing the EconoPACK™2 housing. It features fast IGBT2 technology designed for high-frequency switching applications. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (IC nom) of 50 A at TC = 70°C and 70 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 100 A. The typical collector-emitter saturation voltage (VCE sat) is 3.2 V at Tvj = 25°C. Total power dissipation (Ptot) is 355 W at TC = 25°C. The module includes PressFIT contact technology and an NTC thermistor.
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical and electrical specifications. Confirm RoHS compliance status and specific thermal interface material requirements during procurement. Ensure that the sourcing channel provides valid traceability data for industrial-grade components.
Select this component based on the required 1200 V blocking voltage and 50 A nominal current rating. Evaluate the thermal resistance values (RthJC) to ensure adequate heatsinking for the intended duty cycle. Consider the low switching losses and high short-circuit robustness when designing protection circuits for high-frequency inverter topologies.
This part belongs to the Infineon IGBT2 Fast series within the EconoPACK™2 family. It is engineered for industrial applications requiring compact packaging and efficient thermal management. The module integrates a copper baseplate and utilizes advanced silicon technology to minimize conduction and switching losses compared to standard IGBT generations.
Consult official Infineon cross-reference documents for verified substitutes. Direct replacements must match the 1200 V / 50 A rating, EconoPACK™2 footprint, and PressFIT termination style. Verify equivalent thermal characteristics and switching speeds before implementation.