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Product Detailed Parameters
- Description：LOW POWER ECONO AG-ECONO2B-211
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：3.75V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-ECONO2B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：355 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：3.4 nF @ 25 V
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Overview
The F450R12KS4BPSA1 is a four-pack IGBT module from Infineon Technologies, designed for inverter applications. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 70 A at 25°C (50 A at 70°C). The saturation voltage is 3.2 V at 25°C and 3.75 V at 125°C. Total power dissipation reaches 355 W at 25°C. Operating temperature ranges from -40°C to +125°C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.
Feature Summary
- Four-pack configuration integrating four independent IGBT/diode pairs within a single insulated package.
- Integrated NTC thermistor for precise thermal monitoring and protection during operation.
- High short-circuit capability allowing safe operation up to 300 A for durations not exceeding 10 µs.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix BPSA1 against official documentation to confirm compliance with RoHS standards and packaging details. Ensure that the requested quantity matches the factory packing specifications provided by the manufacturer. Confirm that the component version aligns with the required technical revision before finalizing procurement orders.
Selection Notes
Select this module when a compact four-switch topology is required for medium-power inverter designs. Evaluate the thermal resistance values to ensure adequate heatsinking for the specified power dissipation limits. Consider the gate threshold voltage and internal gate resistance when designing the driver circuitry for optimal switching performance.
Part Context
This component belongs to the standard IGBT module family produced by Infineon Technologies. It utilizes silicon technology for robust power switching. The module is part of a broader range of discrete and power modules offered by the manufacturer for various industrial and commercial power electronics applications.
Replacement Considerations
Consult official replacement lists or application notes for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical ratings, and thermal characteristics against the original datasheet.
FAQ
What is the maximum short-circuit current rating?
The module supports a short-circuit current of 300 A for a duration of up to 10 µs at a junction temperature of 125°C.
What is the isolation test voltage?
The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute between terminals and heatsink.
How does the saturation voltage vary with temperature?
The collector-emitter saturation voltage increases from a typical 3.20 V at 25°C to 3.75 V at 125°C under rated conditions.
