FET, MOSFET Arrays F46MR20W3M1HB11BPSA1 product image

F46MR20W3M1HB11BPSA1

$531.21
  • Description:EASY STANDARD PLUS
  • Series:EasyPACK™

SKU:205acf87158a Category: Brand:

  
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F46MR20W3M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is EASY STANDARD PLUS. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F46MR20W3M1HB11BPSA1

  • Description:EASY STANDARD PLUS
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):2000V (2kV)
  • Current - Continuous Drain (Id) @ 25°C:135A (Tj)
  • Rds On (Max) @ Id, Vgs:8.1mOhm @ 160A, 18V
  • Vgs(th) (Max) @ Id:5.15V @ 112mA
  • Gate Charge (Qg) (Max) @ Vgs:780nC @ 3V
  • Input Capacitance (Ciss) (Max) @ Vds:24100pF @ 1.2kV
  • Power - Max:-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for F46MR20W3M1HB11BPSA1

F46MR20W3M1HB11BPSA1

FET, MOSFET Arrays Overview

The F46MR20W3M1HB11BPSA1 is an EasyPACK module containing four CoolSiC Trench MOSFETs. It features a drain-source voltage of 2000 V and a nominal drain current of 160 A, with a repetitive peak current of 320 A. The on-state resistance is typically 8.1 mΩ at 25°C. Operating temperatures range from -40°C to +175°C. The module utilizes PressFIT technology and includes an integrated NTC thermistor for thermal monitoring.

FET, MOSFET Arrays Feature Summary

  • Integrated CoolSiC Trench MOSFET technology
  • Built-in NTC temperature sensor
  • PressFIT contact connection method

FET, MOSFET Arrays Applications

  • EV charging systems
  • Energy storage systems (ESS)
  • Solar applications
  • DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific part number against official Infineon documentation to ensure compatibility with intended gate drivers and PCB layouts. Confirm that the application environment meets the specified industrial qualification standards. Check for any required application notes regarding mounting torque and thermal interface material specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for high-voltage applications requiring robust switching performance. Ensure the system design accommodates the recommended gate voltages and thermal management requirements. Consider the stray inductance and switching losses when designing the power stage layout. Verify that the continuous and peak current ratings align with the operational demands of the target circuit.

FET, MOSFET Arrays Part Context

This component belongs to the EasyPACK family of discrete semiconductor modules manufactured by Infineon Technologies. It utilizes silicon carbide (SiC) technology to achieve high efficiency and thermal stability. The module is designed for industrial-grade reliability and is qualified according to relevant IEC standards for harsh operating environments.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying electrical parameters and mechanical dimensions.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Does the module include thermal monitoring?

Yes, it includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.

What is the isolation test voltage?

The isolation test voltage is 3.2 kV RMS for 1 minute.

F46MR20W3M1HB11BPSA1F46MR20W3M1HB11BPSA1
$531.21
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