F475R12KS4BPSA1

Overview

The F475R12KS4BPSA1 is a four-pack IGBT module from Infineon Technologies, designed for inverter applications. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 75 A at 65°C case temperature, or 100 A at 25°C. The module includes integrated anti-parallel diodes with a forward current of 75 A. Key electrical parameters include a maximum power dissipation of 500 W at 25°C, a gate-emitter peak voltage of ±20 V, and an operating junction temperature range of -40°C to +125°C. It incorporates a 5 kΩ NTC thermistor for thermal monitoring.

Feature Summary

• Four-pack configuration integrating four independent IGBT switches with associated freewheeling diodes within a single insulated package.
• Integrated NTC thermistor provides precise internal temperature monitoring for reliable thermal management.
• Designed for high-voltage switching applications with robust short-circuit capability up to 450 A.

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and variant specifications. Ensure that the procurement channel is authorized by Infineon Technologies to guarantee component authenticity and traceability. Cross-reference the manufacturer part number with the latest datasheet revision to confirm compliance with current technical standards before finalizing orders.

Selection Notes

Select this module based on its 1200 V blocking voltage and 75 A continuous current rating suitable for medium-power inverter topologies. Evaluate the thermal resistance characteristics and ensure the heatsink design maintains the junction temperature within the specified operational limits. Confirm that the gate drive circuitry supports the required voltage levels and impedance matching for optimal switching performance.

Part Context

This component belongs to the F4 series of IGBT modules manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a standard industrial module package. The product line focuses on providing reliable power switching solutions for demanding industrial environments requiring high efficiency and durability.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Potential alternatives may include other models within the F4 series or updated generations such as the TrenchStop family, provided they match the voltage, current, and pinout requirements.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current is 150 A for a pulse duration of 1 ms.

Does the module include built-in thermal protection components?

Yes, the module integrates an NTC thermistor with a rated resistance of 5 kΩ at 25°C for temperature monitoring.

What is the isolation test voltage of the module?

The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute.