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The F475R17N3E7B58BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT5 family. It features a four-pack configuration with a maximum collector-emitter voltage of 1700 V and a continuous collector current of 75 A at 25°C. The saturation voltage is 1.85 V at 75 A. Operating temperatures range from -40°C to +175°C. The component utilizes AG-ECONO3B packaging for base mounting and includes an integrated NTC thermistor.
Verify the specific ordering suffix against official Infineon documentation to confirm package variant and marking details. Ensure compatibility with standard EconoPACK mounting hardware. Confirm RoHS compliance status through the manufacturer's latest product qualification reports before finalizing procurement specifications.
Select this module for applications requiring 1700 V blocking capability with moderate current ratings up to 75 A. The AG-ECONO3B form factor facilitates compact PCB integration. Evaluate thermal management requirements based on the specified junction temperature limits and ensure gate drive voltages align with Trenchstop IGBT5 specifications.
This component is part of the F4XR17N3X4G series, representing Infineon's fourth-generation Trenchstop IGBT technology. It serves as a high-reliability power switch within the broader portfolio of discrete and module solutions designed for efficient energy conversion in demanding industrial environments.
Direct substitutes include other Infineon modules within the same voltage and current class, such as variants from the F475R17 series. Cross-brand replacements require careful verification of pinout compatibility, thermal resistance characteristics, and switching speed parameters.