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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F575R06KE3B5BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled 3 diode. It features PressFIT contact technology and an integrated NTC temperature sensor. The collector-emitter voltage (VCES) is 600 V, with a nominal continuous DC collector current (IC nom) of 75 A at TC = 80°C and a repetitive peak collector current (ICRM) of 150 A. The typical collector-emitter saturation voltage (VCEsat) is 1.45 V at Tvj = 25°C. Total power dissipation (Ptot) is 250 W at TC = 25°C. The module includes a copper base plate and operates within a junction temperature range of -40°C to 150°C.
Verify the component status before procurement as it may be discontinued. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compatibility with the intended application requirements regarding voltage and current ratings. Check for valid application notes regarding installation procedures.
Select this module for applications requiring a 600 V rating and up to 75 A continuous current. Consider the PressFIT mounting method and the need for compatible tooling. Evaluate the thermal resistance values against the heatsink design. Verify the operating temperature range meets the environmental conditions of the target system.
This part belongs to the EconoPACK™3 series from Infineon Technologies. It integrates three IGBTs and three diodes in a single package. The module is designed for industrial applications requiring high reliability and efficient thermal management. It utilizes advanced semiconductor technology to minimize switching losses.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for potential cross-references or updated product line replacements.