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Product Detailed Parameters
- Description：MOSFET N-CH 500V 38A SOT-227
- Series：HEXFET®
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：420 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The FA38SA50LC is a third-generation HEXFET power MOSFET manufactured by Vishay General Semiconductor. It features an N-channel silicon construction in a fully isolated SOT-227 package. The device provides a drain-to-source breakdown voltage of 500V and a continuous drain current of 38A at 25°C case temperature. Static drain-to-source on-resistance is rated at 0.13Ω. It supports a maximum power dissipation of 500W, operates within a junction temperature range of -55°C to +150°C, and includes avalanche energy ratings.
Feature Summary
- Fully isolated package design for commercial-industrial applications
- Low internal inductance and low drain-to-case capacitance
- Dynamic dv/dt rating capability
- Simple drive requirements with ruggedized device design
Applications
- Commercial-industrial power switching
- High-efficiency power conversion circuits
- Applications requiring parallel operation
Procurement Notes
Verify the manufacturer origin carefully, as this component was originally produced by International Rectifier before its acquisition. Confirm that the specific ordering suffix matches the required lead finish and packaging format. Ensure the datasheet revision aligns with your design specifications, as legacy documentation may not reflect recent manufacturing updates or compliance changes.
Selection Notes
Select this component when high voltage isolation and robust thermal performance are required. The SOT-227 package facilitates easy mounting and parallel configuration for higher current handling. Evaluate the thermal resistance characteristics against your heat sink capabilities to ensure the junction temperature remains within safe operating limits during peak load conditions.
Part Context
This part belongs to the third-generation HEXFET family, designed to balance fast switching speeds with low on-resistance. The SOT-227 package is widely accepted in the industry for power dissipation levels up to approximately 500 watts. It serves as a discrete solution for designers needing reliable performance in demanding environments without the complexity of integrated modules.
Replacement Considerations
Direct substitutes include the VS-FA40SA50LC from Vishay Semiconductors, which offers similar electrical characteristics in the same package type.
