FAM65CR51AXZ2

Overview

The FAM65CR51AXZ2 is a silicon carbide (SiC) MOSFET module from onsemi's EliteSiC family, designed for high-power applications. It features a half-bridge configuration with a breakdown voltage of 650 V and an on-resistance of 51 mΩ. The device utilizes SiC diodes with a forward voltage of 1.6 V and operates within a temperature range of -40°C to +125°C. It supports gate-source voltages of -10 V to +10 V and is packaged in a tube format suitable for through-hole mounting.

Feature Summary

• Utilizes silicon carbide technology for enhanced thermal performance and efficiency
• Integrates SiC diodes to support high-frequency switching operations
• Designed for robust operation in demanding power conversion environments

Applications

• Totem-pole PFC topologies
• High-efficiency power supply designs
• Industrial motor drives

Procurement Notes

Verify the specific suffix 'X' against official documentation, as standard listings often reference 'FAM65CR51ADZ2'. Confirm package type and pinout compatibility before integration. Check current availability status directly with the manufacturer or authorized distributors, as lead times may vary significantly for this component series.

Selection Notes

Select this module for applications requiring low conduction losses and high thermal stability. Ensure the design accommodates the specified 650 V rating and 51 mΩ resistance. Verify that the driving circuitry can handle the required ±10 V gate drive signals. Consider the through-hole packaging constraints during PCB layout planning.

Part Context

This component belongs to onsemi's EliteSiC discrete and power modules portfolio. It is part of the FAM65CR51ADZ1 series, representing advanced silicon carbide solutions. The module integrates both MOSFETs and diodes into a single package to simplify system design and improve reliability in high-voltage power electronics.

FAQ

What is the maximum operating temperature?

The maximum operating temperature is +125°C.

Is this module suitable for high-frequency switching?

Yes, the use of silicon carbide technology and integrated SiC diodes makes it suitable for high-frequency switching applications.