FET, MOSFET Arrays FAM65CR51XZ2 product image

FAM65CR51XZ2

$20.63
  • Description:MOSFET 2N-CH 650V 64A APMCD-B16
  • Series:-

SKU:9e60e8f6b1bd Category: Brand:

  
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FAM65CR51XZ2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 650V 64A APMCD-B16. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FAM65CR51XZ2

  • Description:MOSFET 2N-CH 650V 64A APMCD-B16
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):650V
  • Current - Continuous Drain (Id) @ 25°C:64A (Tc)
  • Rds On (Max) @ Id, Vgs:51mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:5V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs:123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:4864pF @ 400V
  • Power - Max:463W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:12-SSIP Exposed Pad, Formed Leads
  • Supplier Device Package:APMCD-B16
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for FAM65CR51XZ2

FAM65CR51XZ2

FET, MOSFET Arrays Overview

The FAM65CR51XZ2 is a SIP boost converter stage power module in the APMCD-B16 package, designed for multiphase and semi-bridgeless PFC applications. It integrates two SiC MOSFETs and one SiC diode on an AlN substrate. Key electrical parameters include a 650 V drain-to-source breakdown voltage (BVDSS) and a typical RDS(ON) of 44 mΩ at 25°C. The device supports a continuous drain current of 64 A at TC=25°C. The integrated boost diode features a peak repetitive reverse voltage (VRRM) of 600 V and a typical forward voltage (VFM) of 1.65 V at 25°C. Operating temperature ranges from -40°C to +125°C.

FET, MOSFET Arrays Feature Summary

  • Integrated boost converter stage with dual MOSFETs and one SiC diode
  • AlN substrate providing low thermal resistance and high isolation
  • AEC-Q101 and AQG324 qualified for automotive reliability
  • L-shaped lead forming for optimized PCB layout

FET, MOSFET Arrays Applications

  • PFC stage of On-board Chargers (OBC) in EVs
  • PFC stage of On-board Chargers (OBC) in PHEVs
  • Multiphase Boost Converter designs
  • Semi-bridgeless PFC topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix XZ2 corresponds to the APMCD-B16 L-shape package configuration. Confirm that the required shipping quantity aligns with the standard tube packaging of 72 units per tube as specified in the ordering information table. Ensure compatibility with the designated assembly location codes if traceability is required.

FET, MOSFET Arrays Selection Notes

Select this module when a compact, isolated boost stage is needed for high-efficiency PFC designs. The AlN substrate offers superior thermal performance compared to Al2O3 alternatives. Verify that the system design can accommodate the 650 V rating and that the gate drive requirements match the ±20 V absolute maximum ratings. Consider the L-forming leads for space-constrained layouts.

FET, MOSFET Arrays Part Context

This component belongs to the FAM65 series of EliteSiC power modules from onsemi. It is part of the APM16 family, specifically utilizing the APMCD-B16 case outline. The series targets automotive electrification applications, offering high integration levels to reduce system complexity and improve power density in electric vehicle charging systems.

FET, MOSFET Arrays Replacement Considerations

The FAM65CR51XZ1 is the primary variant within this datasheet, differing only by the APMCD-A16 Y-shape package. Direct substitution requires verifying PCB footprint compatibility between the L-shape and Y-shape lead configurations. No other cross-model replacements are confirmed in the provided documentation.

FAM65CR51XZ2FAM65CR51XZ2
$20.63
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