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The FB30R06W1E3 is a three-phase inverter IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology and Emitter Controlled 3 diodes. It features an integrated NTC thermistor for thermal monitoring. The collector-emitter voltage (VCES) is rated at 600 V, with a nominal continuous DC collector current of 30 A at 80°C case temperature. The repetitive peak collector current reaches 60 A. The module incorporates Al2O3 substrate technology for low thermal resistance and includes integrated mounting clamps for robust assembly.
Verify the specific ordering suffix BOMA1 against official documentation to confirm exact configuration details. Ensure that the component meets all required environmental standards and insulation test voltages before integration into final designs.
Select this module for applications requiring a 600 V rating and up to 30 A continuous current. Consider the positive temperature coefficient of VCEsat for parallel operation capabilities. Evaluate the stray inductance and thermal resistance values to ensure compatibility with the intended heatsink and gate drive circuitry.
This component belongs to the EasyPIM™ module family, which combines power semiconductors with control electronics. The FB30R06W1E3 specifically utilizes the IGBT3 generation, offering a balance between low conduction losses and high reliability for industrial power conversion applications.
Consult official replacement lists for compatible modules within the EasyPIM series or other IGBT3-based packages. Verify pinout compatibility and thermal characteristics when considering alternative part numbers.
The maximum operating junction temperature (Tvj op) is 150 °C.
Yes, the module supports short-circuit conditions with a duration of up to 8 µs at 25°C and 6 µs at 150°C.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for one minute.