SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FB50R07W2E3C36BPSA1 is a PIM IGBT module from the EasyPIM series, rated at 650 V and 50 A. It integrates fast Trench/Fieldstop IGBT3 technology with emitter-controlled diodes. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V to 1.90 V at 50 A and 25°C, and a gate-emitter leakage current of 100 nA. The module features PressFIT contact technology and an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. Operating temperatures range from -40°C to +150°C.
Verify component authenticity by cross-referencing the module serial number and material number found on the label against official Infineon records. Ensure the ordering suffix matches the specific variant required for your design. Confirm compliance with relevant industrial qualification standards before finalizing procurement.
Select this module for applications requiring compact power conversion with integrated protection features. Consider the thermal resistance values when designing heatsinking solutions. Verify that the system voltage does not exceed the 650 V rating and that the continuous current requirements align with the 50 A nominal specification under appropriate thermal conditions.
This component belongs to the EasyPIM family of intelligent power modules designed for efficient power conversion. It combines multiple semiconductor functions into a single package to reduce system complexity. The specific model utilizes advanced IGBT3 technology to optimize performance in mid-power applications.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential alternatives if this specific variant is unavailable.
The maximum operating junction temperature is 150°C.
Yes, it includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.
The module uses PressFIT contact technology for mounting.