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FBG30N04CSH is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists EPC Space, LLC. Its product description is MOSFET 2N-CH 300V 4A 4SMD. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FBG30N04CSH
- Description：MOSFET 2N-CH 300V 4A 4SMD
- Series：eGaN®
- Mfr：EPC Space, LLC
- Package：Bulk
- Technology：GaNFET (Gallium Nitride)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：300V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Rds On (Max) @ Id, Vgs：404mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id：2.8V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：2.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：450pF @ 150V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：4-SMD
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FBG30N04CSH
FET, MOSFET Arrays Overview
The FBG30N04CSH is a silicon carbide (SiC) MOSFET manufactured by EPC Space, LLC. This component belongs to the company's high-performance power semiconductor portfolio designed for advanced energy conversion applications. The device integrates a robust SiC structure optimized for high-frequency switching and elevated thermal operation. It features a specific pinout configuration suitable for surface-mount assembly, facilitating integration into compact power modules. The technology leverages the intrinsic material properties of silicon carbide to achieve superior electrical performance compared to traditional silicon counterparts.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide semiconductor technology for enhanced thermal stability and breakdown voltage capabilities
- Engineered for high-efficiency power conversion with low switching losses
- Designed for compact surface-mount integration in modern power electronics architectures
FET, MOSFET Arrays Applications
- High-frequency DC-DC converters
- Electric vehicle powertrains
- Industrial motor drives
FET, MOSFET Arrays Procurement Notes
Verify the exact datasheet revision and package dimensions directly with EPC Space or authorized distributors before finalizing design-in. Confirm that the ordering suffix matches the required thermal and mechanical specifications for your specific PCB layout constraints.
FET, MOSFET Arrays Selection Notes
Evaluate the thermal resistance characteristics and gate drive requirements against your system's cooling infrastructure. Ensure the voltage and current ratings provide adequate margin for transient conditions. Compare the switching speed benefits against potential electromagnetic interference challenges in your specific circuit topology.
FET, MOSFET Arrays Part Context
EPC Space specializes in wide-bandgap semiconductors, particularly gallium nitride and silicon carbide devices. The FBG series represents their efforts to deliver rugged, high-power components for demanding industrial and automotive environments. This model sits within their broader catalog of discrete power switches aimed at improving system density and efficiency.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference guides from EPC Space for verified equivalent part numbers. Do not substitute with generic SiC MOSFETs without verifying pin compatibility and electrical parameter alignment.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
