FET, MOSFET Arrays FC6546010R product image

FC6546010R

  • Description:MOSFET 2N-CH 60V 0.1A SMINI6
  • Series:-

SKU:a97a50cc8f0a Category: Brand:

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FC6546010R is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is MOSFET 2N-CH 60V 0.1A SMINI6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FC6546010R

  • Description:MOSFET 2N-CH 60V 0.1A SMINI6
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:100mA
  • Rds On (Max) @ Id, Vgs:12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id:1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:12pF @ 3V
  • Power - Max:150mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:SMini6-F3-B
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FC6546010R

FC6546010R

FET, MOSFET Arrays Overview

The FC6546010R is an N-channel enhancement mode MOSFET from Panasonic's FC series, designed for surface-mount applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 100 mA. The device utilizes the SSMini6 F3 B package, which measures 1.6 mm in length, 1.2 mm in width, and 0.5 mm in height. Key electrical parameters include a maximum on-resistance (Rds(on)) of 15 Ω and a gate threshold voltage of up to 1.5 V. The component supports a maximum power dissipation of 125 mW and operates at temperatures up to +150 °C.

FET, MOSFET Arrays Feature Summary

  • Compact SSMini6 F3 B surface-mount package suitable for space-constrained designs
  • N-channel enhancement mode operation with low gate threshold voltage
  • High-temperature stability with a maximum operating junction temperature of +150 °C

FET, MOSFET Arrays Applications

  • Battery-powered portable devices requiring low current switching
  • Low-power signal routing and protection circuits
  • General-purpose switching in compact consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer part number against official Panasonic Electronic Components documentation to ensure accuracy. Confirm that the SSMini6 F3 B package dimensions and pinout match the design requirements. Check for RoHS compliance status and any relevant automotive or industrial certifications if applicable to the target application environment.

FET, MOSFET Arrays Selection Notes

Select this component when a small footprint N-channel MOSFET is required for low-current applications. Ensure the 100 mA current rating and 15 Ω on-resistance are sufficient for the load. Consider the 60 V breakdown voltage margin relative to the system supply voltage. Verify thermal management capabilities given the 125 mW power dissipation limit in the specified package.

FET, MOSFET Arrays Part Context

The FC6546010R belongs to Panasonic's FC series of small-signal MOSFETs. This series focuses on miniaturization and efficiency for modern electronic devices. The part is distinct from Panasonic's discrete transistors like the 2SC5546 or other passive components such as the ERJ series resistors found in related catalogs.

FET, MOSFET Arrays Replacement Considerations

Consult Panasonic's official cross-reference tools or distributor databases for verified equivalent parts. Ensure any substitute maintains the same N-channel configuration, 60 V minimum voltage rating, and compatible SSMini6 F3 B or smaller package footprint.

FC6546010RFC6546010R

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