FC8V22040L

FET, MOSFET Arrays Overview

The FC8V22040L is a dual N-channel MOSFET with a common drain configuration, housed in a WMini8-F1 package. It features an internal gate resistor of 1 kΩ for each channel. The device has a maximum drain-source voltage (VDS) of 24 V and a continuous drain current (ID) of 1.0 A. At VGS = 4.5 V, the typical on-state resistance (RDS(on)) is 10.5 mΩ. The operating ambient temperature range extends from -40°C to +85°C. Key electrical parameters include a gate threshold voltage (Vth) ranging from 0.40 V to 1.50 V and a source-to-drain diode forward voltage (VSD) of 0.8 V to 1.2 V at IS = 4.0 A.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel MOS Type with Common Drain Configuration
• Low Drain-Source On-state Resistance
• Internal Gate Resistor Installed
• Halogen-free and RoHS Compliant

FET, MOSFET Arrays Applications

• Lithium-ion secondary battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify that the component is sourced as an Nuvoton Technology Corporation Japan product, as the semiconductor business was transferred from Panasonic Corporation on September 1, 2020. Ensure the datasheet revision matches the latest specifications before finalizing design integration. Confirm compliance with EU RoHS standards and UL-94 V-0 flammability ratings during procurement validation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact dual N-channel solution with integrated gate resistors. The low RDS(on) makes it suitable for efficient power switching in battery protection systems. Verify that the 24 V rating and 1.0 A continuous current meet the circuit requirements. Consider the thermal performance and safe operating area when designing for high-current pulsed loads.

FET, MOSFET Arrays Part Context

This part belongs to the FC series of MOS FETs designed by Nuvoton Technology Corporation Japan. It is specifically engineered for lithium-ion secondary battery protection circuits. The device utilizes a WMini8-F1 surface-mount package to provide a small footprint while maintaining robust electrical characteristics for portable electronic devices.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists or contact Nuvoton Technology Corporation Japan for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical parameters, and package dimensions.

FET, MOSFET Arrays FAQ

What is the function of the internal gate resistor?

The FC8V22040L includes a 1 kΩ internal gate resistor for each channel, which helps control switching speed and dampen potential oscillations.

What is the maximum pulsed drain current?

The absolute maximum rating for pulsed drain current (IDp) is 48 A, measured under specific pulse width conditions.

Is this component suitable for automotive applications?

The datasheet specifies general applications. For special applications like automotive equipment, additional documentation and terms of use must be exchanged with the manufacturer.