FCA16N60_F109

Description：MOSFET N-CH 600V 16A TO3PN
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:41dd793a7a51 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 16A TO3PN
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：260mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PN
Package / Case：TO-3P-3, SC-65-3

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FCA16N60_F109

Overview

The FCA16N60_F109 is a 600V N-Channel MOSFET from the SuperFET family, utilizing an advanced charge balance mechanism. It features a typical Rds(on) of 0.22 Ω and a total gate charge (Qg) of 55 nC. The device supports a continuous drain current of 16 A at 25°C case temperature and withstands single pulsed avalanche energy of 450 mJ. It operates within a junction temperature range of -55 to +150°C.

Feature Summary

SuperFET technology provides low on-resistance and reduced gate charge for high efficiency.
Advanced charge balance mechanism minimizes conduction loss and switching performance degradation.
Capable of withstanding extreme dv/dt rates and higher avalanche energy levels.

Applications

AC/DC power conversion in switching mode operation
System miniaturization designs requiring high efficiency
Power supplies demanding superior switching performance

Procurement Notes

Verify component authenticity through authorized Fairchild or onsemi distributors to avoid counterfeit parts. Confirm package type matches TO-3PN specifications. Ensure storage conditions meet semiconductor handling standards. Check datasheet revisions for updated thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust avalanche capability and low switching losses. The TO-3PN package facilitates effective heat dissipation for high-power scenarios. Evaluate thermal resistance requirements against system constraints. Consider the specific gate charge values when designing driver circuits for optimal switching speeds.

Part Context

This part belongs to the FCA series of high-voltage MOSFETs originally developed by Fairchild Semiconductor, now under onsemi. The SuperFET family represents a generation of devices optimized for charge balance. The FCA16N60 variant specifically targets high-performance power conversion needs.

Replacement Considerations

Check for direct equivalents within the FCA series or other SuperFET variants. Verify pinout compatibility and thermal resistance parameters. Ensure replacement devices meet the same voltage and current ratings for seamless integration into existing circuit designs.