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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FCA20N60F is a single N-channel Power MOSFET from onsemi, utilizing SuperFET FRFET technology. It features a 600V drain-source voltage rating and a continuous drain current of 20A. The device offers a maximum on-resistance of 150 mΩ at 10V gate drive. Key electrical parameters include a gate charge of 98 nC, a threshold voltage of 3V, and a power dissipation capacity of 208W. Switching characteristics specify a typical turn-on delay of 230 ns, rise time of 140 ns, turn-off delay of 65 ns, and fall time of 65 ns. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- SuperFET FRFET technology for optimized high-voltage performance
- Enhanced avalanche ruggedness and low switching losses
- Zener-protected gate structure for robust operation
Applications
- High-frequency switch-mode power supplies
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct package type and lead-free status. Confirm RoHS compliance details directly with onsemi documentation. Cross-reference the part number with authorized distributors to validate authenticity and avoid counterfeit components. Ensure thermal management requirements align with the specified 208W power dissipation in your design.
Selection Notes
Select this component for applications requiring high voltage isolation and efficient switching. The TO-3PN-3 package suits through-hole mounting for high-power thermal management. Compare the 150 mΩ on-resistance and 98 nC gate charge against alternative devices to balance conduction and switching losses. Ensure the 600V rating exceeds the maximum circuit voltage with adequate safety margin.
Part Context
This device belongs to onsemi's SuperFET family, designed for high-performance power switching. The FCA series typically targets industrial and consumer power supplies. The FRFET designation indicates specific fast recovery characteristics suitable for hard-switching applications. It complements other high-voltage MOSFETs in the portfolio for complete power stage solutions.
Replacement Considerations
Check for direct pin-compatible substitutes with similar Vds, Id, and Rds(on) ratings. Verify that any replacement maintains the TO-3PN-3 package and thermal characteristics. Ensure the alternative device meets the same switching speed and avalanche energy requirements.
