FCA22N60N

$3.75

Description：POWER FIELD-EFFECT TRANSISTOR, 2
Series：SupreMOS™
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:e93db4376fd0 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：POWER FIELD-EFFECT TRANSISTOR, 2
Series：SupreMOS™
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：205W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PN
Package / Case：TO-3P-3, SC-65-3

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FCA22N60N

Overview

The FCA22N60N is an N-channel power MOSFET from Fairchild Semiconductor’s SupreMOS family, housed in a TO-3PN through-hole package. It features a 600V drain-source voltage rating and a continuous drain current of 22A at case temperature. The device exhibits a maximum on-resistance of 165mΩ at 10V gate drive. Key electrical parameters include a maximum gate charge of 45nC at 10V, an input capacitance of 1950pF at 100V, and a threshold voltage of 4V at 250µA. It supports a maximum power dissipation of 205W and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Utilizes SupreMOS technology for low on-resistance and reduced gate charge
Engineered for superior switching performance and high avalanche energy withstand
Optimized for minimizing conduction loss in AC/DC power conversion

Applications

AC/DC power conversion systems
Switching mode power supplies
Industrial applications requiring high voltage isolation

Procurement Notes

Verify component authenticity as the part status is listed as End-of-Life (EOL). Confirm that replacement sources provide original Fairchild or valid successor documentation. Ensure the TO-3PN package matches the design requirements. Check for any specific handling precautions related to the legacy manufacturing process.

Selection Notes

Select this component for designs requiring robust 600V blocking capability with moderate current handling. The TO-3PN package facilitates efficient heat dissipation for high-power applications. Consider the 165mΩ on-resistance for efficiency calculations. Verify compatibility with existing gate drive voltages given the 10V optimization point.

Part Context

This device belongs to the SupreMOS series, representing Fairchild's advanced superjunction MOSFET technology. The series targets system miniaturization and higher efficiency in power electronics. It succeeds earlier SuperFET generations by offering improved charge balance mechanisms for better performance under extreme dv/dt conditions.