ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 35A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：98mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：181 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6640 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：312.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
Download product information
Overview
The FCA35N60 is a single N-channel enhancement mode MOSFET manufactured by onsemi, utilizing SuperFET technology. It features a TO-3PN-3 through-hole package with a drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 35 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 79 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 139 nC, a threshold voltage (Vgs(th)) of 5 V, and a power dissipation (Pd) of 312.5 W. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- SuperFET technology for robust device performance and reliable operation
- 100% avalanche tested for enhanced ruggedness
- Minimum lot-to-lot variations ensuring consistent characteristics
Applications
- Motor drive circuits
- DC-DC converter topologies
- General power switching applications
- Solenoid drive systems
Procurement Notes
Verify component authenticity against official onsemi documentation due to potential third-party manufacturing sources. Confirm the specific datasheet version matches the production lot, as historical Fairchild Semiconductor designs may have been transferred. Ensure procurement channels provide traceability for industrial-grade components. Check for RoHS compliance status in the latest revision notes before integration into regulated assemblies.
Selection Notes
Select this component for high-current applications requiring low conduction losses in a standard through-hole package. The 650 V rating provides sufficient headroom for common industrial bus voltages. Evaluate thermal management requirements carefully, as the 312.5 W dissipation rating assumes ideal heatsinking conditions. Compare gate charge specifications against driver capabilities to ensure efficient switching speeds without excessive drive current demands.
Part Context
This part belongs to the FCA series of high-power N-channel MOSFETs from onsemi. Originally developed under Fairchild Semiconductor, these devices are widely used in medium-to-high power conversion systems. The TO-3PN package offers superior thermal performance compared to smaller surface-mount alternatives, making it suitable for chassis-mounted or board-level power stages where space allows for larger footprints.
Replacement Considerations
Direct substitutes include FCA36N60NF and SPW35N60CFD. Verify pinout compatibility and thermal resistance values when cross-referencing with Infineon or other manufacturers' equivalents. Ensure replacement parts meet the same 650 V breakdown and 35 A current ratings for direct interchangeability in existing designs.
