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Product Detailed Parameters
- Description：MOSFET N-CH 600V 34.9A TO3PN
- Series：FRFET®, SupreMOS®
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：34.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：95mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4245 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：312W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FCA36N60NF is a single N-channel SupreMOS FRFET MOSFET manufactured by onsemi. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 34.9A at case temperature. The device exhibits a maximum on-resistance of 80mΩ at 10V gate drive. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 312W. Packaged in a TO-3PN-3 through-hole housing, it utilizes enhancement mode technology.
Feature Summary
- SupreMOS FRFET technology for optimized switching performance
- High-voltage capability suitable for demanding power applications
- Through-hole mounting for robust mechanical integration
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify component authenticity through authorized distribution channels due to obsolescence status. Confirm package integrity and pin alignment against the TO-3PN-3 specification before installation. Review manufacturer documentation for handling precautions related to electrostatic discharge sensitivity during storage and assembly processes.
Selection Notes
Evaluate thermal management requirements based on the 312W power dissipation limit. Ensure gate drive voltage aligns with the specified threshold characteristics for optimal conduction. Compare on-resistance values against alternative devices to determine efficiency trade-offs within the target circuit topology.
Part Context
This component belongs to the SupreMOS family, representing onsemi's advanced silicon MOSFET portfolio. The FRFET designation indicates specific fast recovery characteristics integrated into the structure. It serves as a discrete power switching element designed for high-reliability industrial environments.
Replacement Considerations
The FCP36N60N is a documented equivalent offering similar electrical specifications in a TO-220-3 package. Verify pinout compatibility and thermal interface requirements when substituting between these distinct housing formats.
