ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
Download product information
Overview
The onsemi FCA47N60-F109 is an N-channel enhancement mode MOSFET from the SuperFET series, designed for high-power switching applications. It features a maximum drain-source voltage of 600 V and a continuous drain current of 47 A at case temperature. The device utilizes TO-3PN through-hole packaging with three pins. Key electrical parameters include a maximum on-resistance of 73 mΩ, a gate threshold voltage minimum of 3 V, and a maximum power dissipation of 417 W. It operates within a temperature range of -55 °C to +150 °C, with a typical gate charge of 210 nC at 10 V.
Feature Summary
- SuperFET technology integration for optimized performance in power conversion circuits
- High avalanche energy capability ensuring robust operation under transient stress conditions
- Low on-state resistance to minimize conduction losses in high-current applications
Applications
- Switching mode power supplies (SMPS)
- Active power factor correction (PFC) circuits
- Electronic lamp ballasts
Procurement Notes
Verify the specific suffix -F109 against official datasheets to confirm package and tape-and-reel specifications. Ensure thermal management design accounts for the 417 W dissipation rating in the TO-3PN package. Confirm RoHS compliance status as per the latest manufacturer documentation before finalizing procurement orders.
Selection Notes
Select this component for designs requiring 600 V blocking voltage and high current handling in through-hole assemblies. Compare the 73 mΩ on-resistance against system efficiency targets. Evaluate the 210 nC gate charge for driver compatibility. Consider the TO-3PN form factor for board space and mounting constraints relative to surface-mount alternatives.
Part Context
This part belongs to onsemi's SuperFET family, which combines advanced planar stripe DMOS technology with integrated fast recovery body diodes. The FCA47N60 variant specifically targets high-voltage, medium-to-high current applications where reliability and low conduction loss are critical. It serves as a discrete solution for industrial and consumer power electronics.
Replacement Considerations
Cross-reference with FCH47N60F for similar TO-247/TO-3PN pinout and electrical characteristics. Verify that any substitute maintains the 600 V rating and comparable Rds(on) values. Check for identical thermal resistance and package dimensions to ensure mechanical compatibility without redesign.
