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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：73mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The onsemi FCA47N60F is an N-channel enhancement mode MOSFET belonging to the SuperFET series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 47 A. The device utilizes a TO-3PN package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 73 mΩ, a gate threshold voltage minimum of 3 V, and a maximum power dissipation of 417 W. The typical gate charge at 10 V is 210 nC, with a maximum gate-source voltage range of -30 V to +30 V. Operating temperatures span from -55 °C to +150 °C.
Feature Summary
- SuperFET technology integration for optimized switching performance
- High-voltage capability suitable for robust power applications
- Through-hole TO-3PN packaging for secure mechanical installation
Applications
- Industrial motor control systems
- High-frequency switch-mode power supplies
- DC-to-AC inverter circuits
Procurement Notes
Verify the specific suffix 'F' against official datasheets to confirm exact binning or testing criteria. Ensure the procurement channel provides valid manufacturer traceability documentation. Cross-reference the component marking with the official onsemi part identification guide to prevent counterfeit substitution. Confirm RoHS compliance status matches project requirements before finalizing orders.
Selection Notes
Select this component when high voltage isolation and significant current handling are required in a through-hole configuration. The SuperFET architecture offers advantages in switching efficiency compared to standard planar technologies. Evaluate thermal management needs based on the 417 W dissipation rating and ensure adequate heatsinking for the TO-3PN package dimensions.
Part Context
This device is part of the onsemi SuperFET family, designed for high-performance power switching. It represents a transition from older planar technologies to trench-gate structures that reduce conduction losses. The TO-3PN form factor allows for direct board mounting while maintaining high thermal conductivity for demanding industrial environments.
Replacement Considerations
Direct replacements within the same series include the FCA76N60N for higher current capacity. Verify pinout compatibility and thermal resistance characteristics when substituting with other manufacturers' 600V TO-3PN MOSFETs.
