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FCAB21490L1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is MOSFET 2N-CH 10SMD. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FCAB21490L1
- Description：MOSFET 2N-CH 10SMD
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.4V @ 1.11mA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：3570pF @ 10V
- Power - Max：3.5W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-SMD
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FCAB21490L1
FET, MOSFET Arrays Overview
The FCAB21490L1 is a dual N-channel MOSFET array in a CSP package, designed for lithium-ion secondary battery protection circuits. It features a source-source configuration with a maximum drain-source voltage of 12V and a continuous source current of 13.5A on FR4 boards. The typical source-source on-resistance is 2.2mΩ at VGS=3.8V. Key electrical parameters include a gate-source threshold voltage of 1.2V to 1.9V, total gate charge of 6nC to 12nC, and input capacitance of 3570pF. The device supports a junction temperature up to 150°C and operates within a storage range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel MOSFET array optimized for low on-resistance applications
- CSP (Chip Size Package) design for compact surface-mount assembly
- Halogen-free and RoHS compliant construction
FET, MOSFET Arrays Applications
- Lithium-ion secondary battery protection circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against Panasonic's official documentation to ensure correct packaging and marking specifications. Confirm that the component meets all applicable environmental compliance standards required for your manufacturing process before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a low-profile dual N-channel MOSFET solution is required for battery management systems. Ensure the PCB layout accommodates the minimum recommended pad size on FR4 substrates to achieve the specified thermal performance and current handling capabilities.
FET, MOSFET Arrays Part Context
This part belongs to Panasonic's discrete MOSFET product line, specifically engineered for power switching in portable electronics and battery packs. It utilizes advanced semiconductor processes to minimize resistance while maintaining high reliability in small form factors suitable for modern consumer devices.
FET, MOSFET Arrays Replacement Considerations
Consult Panasonic technical support for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' dual MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.
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