FCB099N65S3

$4.81

Description：MOSFET N-CH 650V 30A D2PAK-3
Series：SuperFET® III
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:291d58704c2b Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 30A D2PAK-3
Series：SuperFET® III
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2480 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：227W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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FCB099N65S3

Overview

The FCB099N65S3 is an N-channel power MOSFET from the SUPERFET III family, utilizing charge balance super-junction technology. It features a 650 V drain-source voltage rating and a maximum on-resistance of 99 mΩ at 10 V gate drive. The device supports a continuous drain current of 30 A at 25°C case temperature and handles pulsed currents up to 75 A. Key electrical parameters include a typical total gate charge of 61 nC and a typical effective output capacitance of 544 pF. It is housed in a D2PAK package.

Feature Summary

Utilizes charge balance super-junction technology for low conduction loss and superior switching performance.
Capable of withstanding extreme dv/dt rates and includes 100% avalanche testing for reliability.
Easy Drive series design assists in managing electromagnetic interference (EMI) issues.

Applications

Telecom and server power supplies
Industrial power supplies
Uninterruptible Power Supply (UPS) systems
Solar energy applications

Procurement Notes

Verify the specific ordering suffix and marking details against the manufacturer's official documentation before procurement. Confirm that the component meets all required environmental compliance standards, such as RoHS and lead-free specifications, for your intended application. Ensure thermal management designs align with the provided junction-to-case thermal resistance values.

Selection Notes

Select this component for high-voltage applications requiring efficient power conversion with minimized EMI. Consider the 650 V breakdown voltage and low gate charge characteristics when designing for telecom or industrial environments. Evaluate the thermal dissipation requirements based on the specified power dissipation and derating curves to ensure reliable operation under expected load conditions.

Part Context

This part belongs to the SUPERFET III series by onsemi, designed for high-voltage super-junction MOSFET applications. The series emphasizes low on-resistance and reduced gate charge to enhance overall system efficiency. It represents an evolution in power semiconductor technology aimed at simplifying design implementation while maintaining robust performance in demanding power supply architectures.

Replacement Considerations

Consult official substitution guides for verified alternatives within the SUPERFET III family. Ensure any replacement matches the 650 V rating, D2PAK package dimensions, and electrical characteristics such as RDS(on) and Qg. Verify compatibility with existing thermal and PCB layout constraints before integration.